Infineon HEXFET Type N-Channel MOSFET, 17 A, 100 V TO-263 IRL530NSTRLPBF
- RS庫存編號:
- 258-3992
- 製造零件編號:
- IRL530NSTRLPBF
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 5 件）*
TWD245.00
(不含稅)
TWD257.25
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 50 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD49.00 | TWD245.00 |
| 10 - 95 | TWD46.60 | TWD233.00 |
| 100 - 245 | TWD44.00 | TWD220.00 |
| 250 - 495 | TWD40.80 | TWD204.00 |
| 500 + | TWD37.60 | TWD188.00 |
* 參考價格
- RS庫存編號:
- 258-3992
- 製造零件編號:
- IRL530NSTRLPBF
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-263 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 22.7nC | |
| Maximum Power Dissipation Pd | 3.8W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Distrelec Product Id | 304-40-548 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-263 | ||
Series HEXFET | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 22.7nC | ||
Maximum Power Dissipation Pd 3.8W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Distrelec Product Id 304-40-548 | ||
Automotive Standard No | ||
The Infineon HEXFET power MOSFET is fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard surface-mount power package
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