Infineon HEXFET Type N-Channel MOSFET, 17 A, 100 V Enhancement, 3-Pin TO-263 IRF530NSTRLPBF

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包裝方式：
RS庫存編號:
831-2837
製造零件編號:
IRF530NSTRLPBF
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

17A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

90mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

37nC

Maximum Power Dissipation Pd

70W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

9.65 mm

Height

4.83mm

Standards/Approvals

No

Length

10.67mm

Distrelec Product Id

304-44-446

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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