Infineon HEXFET Type N-Channel MOSFET, 88 A, 100 V TO-263 IRFB4410PBF

N

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TWD184.80

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20 - 48TWD75.50TWD151.00
50 - 98TWD74.00TWD148.00
100 +TWD62.00TWD124.00

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包裝方式:
RS庫存編號:
257-5823
製造零件編號:
IRFB4410PBF
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

88A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-263

Mount Type

PCB

Maximum Drain Source Resistance Rds

10mΩ

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

200W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Infineon strongIRFET power MOSFET family is optimized for low RDS and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Optimized for broadest availability from distribution partners

Product qualification according to JEDEC standard

Industry standard through-hole power package

High-current rating

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