製造零件編號

Vishay Si2329DS Type P-Channel MOSFET, -6 A, -8 V, 3-Pin SOT-23

RS庫存編號:: 256-7346
製造零件編號:: SI2329DS-T1-GE3
製造商:: Vishay

Vishay Si2329DS Type P-Channel MOSFET, -6 A, -8 V, 3-Pin SOT-23

此圖片僅供參考，請參閲產品詳細資訊及規格

小計（1 卷，共 3000 件）*

TWD25,200.00

(不含稅)

TWD26,460.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年5月11日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 +	TWD8.40	TWD25,200.00

* 參考價格

RS庫存編號:: 256-7346
製造零件編號:: SI2329DS-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	-6A
	Maximum Drain Source Voltage Vds	-8V
	Package Type	SOT-23
	Series	Si2329DS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.12Ω
	Maximum Gate Source Voltage Vgs	5 V
	Typical Gate Charge Qg @ Vgs	19.3nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2.5W
	Maximum Operating Temperature	150°C
	Standards/Approvals	IEC 61249-2-21, RoHS
	Width	1.4 mm
	Length	3.04mm
	Height	1.12mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id -6A
	Maximum Drain Source Voltage Vds -8V
	Package Type SOT-23
	Series Si2329DS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.12Ω
	Maximum Gate Source Voltage Vgs 5 V
	Typical Gate Charge Qg @ Vgs 19.3nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2.5W
	Maximum Operating Temperature 150°C
	Standards/Approvals IEC 61249-2-21, RoHS
	Width 1.4 mm
	Length 3.04mm
	Height 1.12mm
	Automotive Standard No

Datasheet - SI2329DS-T1-GE3

The Vishay Semiconductor P-channel 8 V 6A (Tc) 2.5W (Tc) surface mount SOT-23-3 (TO-236) halogen-free according to IEC 61249-2-21 definition.

TrenchFET power mosfet

100 % Rg tested

Compliant to RoHS directive 2002/95/EC

Vishay Si2329DS Type P-Channel MOSFET, -6 A, -8 V, 3-Pin SOT-23

訂單超過 $1,300.00 免費送貨

相關連結