Vishay TrenchFET Type P-Channel MOSFET, 7.6 A, 30 V Enhancement, 3-Pin SOT-23

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RS庫存編號:
180-7274
製造零件編號:
SI2369DS-T1-GE3
製造商:
Vishay
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品牌

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

7.6A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

40mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

11.4nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.6W

Maximum Operating Temperature

150°C

Width

2.64 mm

Height

1.12mm

Length

3.04mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

Vishay MOSFET


The Vishay surface mount P-channel MOSFET is a new age product with a drain-source resistance of 29mohm at a gate-source voltage of 10V. It has a maximum gate-source voltage of 20V and drain-source voltage of 30V. The MOSFET has a minimum and a maximum driving voltage of 4.5V and 10V respectively. It has continuous drain current of 7.6A and maximum power dissipation of 2.5W. MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications


• DC/DC converter

• For mobile computing

• Load switch

• Notebook adaptor switch

Certifications


• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

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