onsemi NTM Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 5-Pin DFN-5
- RS庫存編號:
- 248-5821
- 製造零件編號:
- NTMFS002N10MCLT1G
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 1500 件）*
TWD84,600.00
(不含稅)
TWD88,830.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 1,500 件從 2026年1月26日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 1500 - 1500 | TWD56.40 | TWD84,600.00 |
| 3000 + | TWD55.30 | TWD82,950.00 |
* 參考價格
- RS庫存編號:
- 248-5821
- 製造零件編號:
- NTMFS002N10MCLT1G
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NTM | |
| Package Type | DFN-5 | |
| Mount Type | Through Hole | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Power Dissipation Pd | 117W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NTM | ||
Package Type DFN-5 | ||
Mount Type Through Hole | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Power Dissipation Pd 117W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The ON Semiconductor MOSFET is a N channel MOSFET with 100 V drain to source voltage, RDS(ON) 2.8 mohm and continuous drain current 175 A also these devices are Pb−free, Halogen free/BFR free, Beryllium free and are RoHS compliant.
Small footprint (5x6 mm) for compact design
Low RDS(on) to minimize conduction losses
Low QG and capacitance to minimize driver losses
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