onsemi NTM Type N-Channel MOSFET, 58 A, 1200 V N, 5-Pin DFN NTMFS5C645NT1G
- RS庫存編號:
- 244-9185
- 製造零件編號:
- NTMFS5C645NT1G
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD163.00
(不含稅)
TWD171.16
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 1,480 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD81.50 | TWD163.00 |
| 10 - 98 | TWD80.00 | TWD160.00 |
| 100 - 248 | TWD77.00 | TWD154.00 |
| 250 - 498 | TWD75.50 | TWD151.00 |
| 500 + | TWD73.00 | TWD146.00 |
* 參考價格
- RS庫存編號:
- 244-9185
- 製造零件編號:
- NTMFS5C645NT1G
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | DFN | |
| Series | NTM | |
| Mount Type | Through Hole | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 117W | |
| Typical Gate Charge Qg @ Vgs | 20.4nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type DFN | ||
Series NTM | ||
Mount Type Through Hole | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 117W | ||
Typical Gate Charge Qg @ Vgs 20.4nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ON Semiconductor MOSFET Drain−to−Source Voltage is 60 V and Gate−to−Source Voltage is ±20 V.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are Pb−Free and are RoHS Compliant
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