DiodesZetex Type N-Channel MOSFET, 22 A, 40 V Enhancement, 8-Pin PowerDI5060-8 DMTH43M8LPSQ-13
- RS庫存編號:
- 246-7567
- 製造零件編號:
- DMTH43M8LPSQ-13
- 製造商:
- DiodesZetex
可享批量折扣
小計(1 包,共 5 件)*
TWD152.00
(不含稅)
TWD159.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 2,490 件從 2026年2月23日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD30.40 | TWD152.00 |
| 50 - 95 | TWD29.80 | TWD149.00 |
| 100 - 245 | TWD29.00 | TWD145.00 |
| 250 - 995 | TWD28.60 | TWD143.00 |
| 1000 + | TWD27.60 | TWD138.00 |
* 參考價格
- RS庫存編號:
- 246-7567
- 製造零件編號:
- DMTH43M8LPSQ-13
- 製造商:
- DiodesZetex
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 22A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerDI5060-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.005mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 1.73W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 22A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerDI5060-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.005mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 1.73W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes an N-channel enhancement mode MOSFET, it has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in powerDI5060-8 packaging. It offers fast switching and high efficiency. It is rated to +175°C and ideal for high ambient temperature environments. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 40 V and maximum gate to source voltage is ±20 V It offers low on-resistance It has high BVDSS rating for power application It offers low input capacitance
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