DiodesZetex Type N-Channel MOSFET, 60 V Enhancement, 8-Pin PowerDI5060-8 DMT6011LPDW-13
- RS庫存編號:
- 246-7555
- 製造零件編號:
- DMT6011LPDW-13
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD700.00
(不含稅)
TWD735.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 2,475 件從 2026年1月05日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 25 | TWD28.00 | TWD700.00 |
| 50 - 75 | TWD27.30 | TWD682.50 |
| 100 - 225 | TWD26.60 | TWD665.00 |
| 250 + | TWD26.00 | TWD650.00 |
* 參考價格
- RS庫存編號:
- 246-7555
- 製造零件編號:
- DMT6011LPDW-13
- 製造商:
- DiodesZetex
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerDI5060-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.022Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 22.2nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerDI5060-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.022Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 22.2nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in powerDI5060-8 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application. It has working temperature range of -55°C to +150°C.
Maximum drain to source voltage is 20 V and maximum gate to source voltage is ±12 V It offers low on-resistance It has low gate threshold voltage It offers an ESD protected gate
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