DiodesZetex Type P-Channel MOSFET, 160 mA, 12 V Enhancement, 8-Pin SOIC DMP65H20D0HSS-13
- RS庫存編號:
- 246-7535
- 製造零件編號:
- DMP65H20D0HSS-13
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 10 件）*
TWD340.00
(不含稅)
TWD357.00
(含稅)
訂單超過 $1,300.00 免費送貨
庫存資訊目前無法查詢
單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD34.00 | TWD340.00 |
| 50 - 90 | TWD33.10 | TWD331.00 |
| 100 - 490 | TWD32.30 | TWD323.00 |
| 500 + | TWD31.70 | TWD317.00 |
* 參考價格
- RS庫存編號:
- 246-7535
- 製造零件編號:
- DMP65H20D0HSS-13
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 160mA | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 1.73W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 3.85 mm | |
| Standards/Approvals | No | |
| Height | 1.45mm | |
| Length | 4.9mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 160mA | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 1.73W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 3.85 mm | ||
Standards/Approvals No | ||
Height 1.45mm | ||
Length 4.9mm | ||
Automotive Standard AEC-Q101 | ||
The DiodesZetex makes a P-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SO-8 packaging. It offers fast switching and high efficiency.
Maximum drain to source voltage is 600 V and maximum gate to source voltage is ±30 V It offers low on-resistance It has high BVDSS rating for power application It offers low input capacitance
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