DiodesZetex Type N, Type P-Channel MOSFET, 40 V Enhancement, 8-Pin SOIC DMC4040SSDQ-13
- RS庫存編號:
- 246-7500
- 製造零件編號:
- DMC4040SSDQ-13
- 製造商:
- DiodesZetex
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 10 件)*
TWD238.00
(不含稅)
TWD249.90
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,490 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 40 | TWD23.80 | TWD238.00 |
| 50 - 90 | TWD23.40 | TWD234.00 |
| 100 - 240 | TWD22.70 | TWD227.00 |
| 250 - 990 | TWD22.30 | TWD223.00 |
| 1000 + | TWD21.70 | TWD217.00 |
* 參考價格
- RS庫存編號:
- 246-7500
- 製造零件編號:
- DMC4040SSDQ-13
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.045Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.14W | |
| Typical Gate Charge Qg @ Vgs | 37.6nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.045Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.14W | ||
Typical Gate Charge Qg @ Vgs 37.6nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The DiodesZetex makes a complementary pair enhancement mode MOSFET, designed to ensure that RDS(on) of N and P channel FET are matched to minimize losses in both arms of the bridge e. The DMC4040SSDQ is optimized for use in 3 phases brushless DC motor circuits (BLDC), CCFL backlighting. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SO-8 packaging. It offers fast switching and low input capacitance. It has working temperature range of -55°C to +150°C.
Maximum drain to source voltage is 40 V and maximum gate to source voltage is ±20 V Its low RDS(ON) helps to minimize power losses Its low Qg helps to minimizes switching losses
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