DiodesZetex 2 Type N-Channel MOSFET, 20 V Enhancement, 6-Pin U-DFN2030 DMN2014LHAB-13
- RS庫存編號:
- 246-7508
- 製造零件編號:
- DMN2014LHAB-13
- 製造商:
- DiodesZetex
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 25 件)*
TWD382.50
(不含稅)
TWD401.50
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 9,950 個,準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 475 | TWD15.30 | TWD382.50 |
| 500 - 975 | TWD14.90 | TWD372.50 |
| 1000 - 2475 | TWD14.60 | TWD365.00 |
| 2500 + | TWD14.20 | TWD355.00 |
* 參考價格
- RS庫存編號:
- 246-7508
- 製造零件編號:
- DMN2014LHAB-13
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | U-DFN2030 | |
| Pin Count | 6 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Maximum Power Dissipation Pd | 0.8W | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Forward Voltage Vf | 0.75V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type U-DFN2030 | ||
Pin Count 6 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Maximum Power Dissipation Pd 0.8W | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Forward Voltage Vf 0.75V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The DiodesZetex makes a new generation dual N-channel enhancement mode MOSFET, it has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in U-DFN2030-6 packaging. It offers fast switching and high efficiency. It has working temperature range of -55°C to +150°C. It offers low input capacitance and fast switching speed.
Maximum drain to source voltage is 20 V and maximum gate to source voltage is ±16 V It offers low on-resistance and low gate threshold voltage ESD protected gate
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