DiodesZetex Type N-Channel MOSFET, 20 V Enhancement, 6-Pin TSOT-26
- RS庫存編號:
- 246-6790
- 製造零件編號:
- DMN2024UVTQ-7
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD18,000.00
(不含稅)
TWD18,900.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 6,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD6.00 | TWD18,000.00 |
| 15000 + | TWD5.90 | TWD17,700.00 |
* 參考價格
- RS庫存編號:
- 246-6790
- 製造零件編號:
- DMN2024UVTQ-7
- 製造商:
- DiodesZetex
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TSOT-26 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.034Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Typical Gate Charge Qg @ Vgs | 7.1nC | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TSOT-26 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.034Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Typical Gate Charge Qg @ Vgs 7.1nC | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to meet the stringent requirements of automotive applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in TSOT26 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application.
Maximum drain to source voltage is 20 V and maximum gate to source voltage is ±10 V Thermally efficient package ideal for cooler running applications It offers low input capacitance
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