DiodesZetex Dual DMN3061 1 Type N-Channel MOSFET, 3.4 A, 30 V Enhancement, 6-Pin TSOT DMN3061SVT-7
- RS庫存編號:
- 206-0083
- 製造零件編號:
- DMN3061SVT-7
- 製造商:
- DiodesZetex
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD307.50
(不含稅)
TWD323.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,475 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 725 | TWD12.30 | TWD307.50 |
| 750 - 1475 | TWD11.50 | TWD287.50 |
| 1500 + | TWD11.30 | TWD282.50 |
* 參考價格
- RS庫存編號:
- 206-0083
- 製造零件編號:
- DMN3061SVT-7
- 製造商:
- DiodesZetex
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSOT | |
| Series | DMN3061 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.08W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.7V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Width | 1.6 mm | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSOT | ||
Series DMN3061 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.08W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.7V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Width 1.6 mm | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The DiodesZetex 30V dual N- channel enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application. Its gate-source voltage is 20 V with 0.88W thermal power dissipation.
Low input capacitance
Fast switching speed
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