Infineon CoolSiC Type N-Channel MOSFET, 52 A, 75 V, 3-Pin TO-247 AIMW120R045M1XKSA1
- RS庫存編號:
- 244-2910
- 製造零件編號:
- AIMW120R045M1XKSA1
- 製造商:
- Infineon
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- RS庫存編號:
- 244-2910
- 製造零件編號:
- AIMW120R045M1XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | CoolSiC | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 5.2V | |
| Typical Gate Charge Qg @ Vgs | 57nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.3mm | |
| Length | 16.3mm | |
| Width | 21.5 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series CoolSiC | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 5.2V | ||
Typical Gate Charge Qg @ Vgs 57nC | ||
Maximum Operating Temperature 175°C | ||
Height 5.3mm | ||
Length 16.3mm | ||
Width 21.5 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon AIMW120R045M1XKSA1 is specifically designed to meet the high requirements demanded by the automotive industry with regards to reliability, quality and performance. The increase of switching frequency for a converter using CoolSiC™ MOSFETs can result in dramatically reduced volume and weight of the magnetic components by up to 25%, which yields to significant cost increase of the application itself. The gain in performance fulfills new regulation standards in terms of higher efficiency requirements for electric vehicles.
Revolutionary semiconductor material - Silicon Carbide Very low switching losses
Threshold-free on state characteristic IGBT-compatible driving voltage (15V for turn-on)
0V turn-off gate voltage
Benchmark gate threshold voltage, VGS(th)=4.5V
Fully controllable dv/dt
Commutation robust body diode, ready for synchronous rectification Temperature independent turn-off switching losses
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