Infineon CoolSiC Type N-Channel MOSFET, 52 A, 75 V, 3-Pin TO-247
- RS庫存編號:
- 244-2909
- 製造零件編號:
- AIMW120R045M1XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 240 件）*
TWD123,480.00
(不含稅)
TWD129,652.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 480 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 240 - 240 | TWD514.50 | TWD123,480.00 |
| 480 + | TWD499.10 | TWD119,784.00 |
* 參考價格
- RS庫存編號:
- 244-2909
- 製造零件編號:
- AIMW120R045M1XKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-247 | |
| Series | CoolSiC | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Typical Gate Charge Qg @ Vgs | 57nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 5.2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 21.5 mm | |
| Length | 16.3mm | |
| Height | 5.3mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-247 | ||
Series CoolSiC | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Typical Gate Charge Qg @ Vgs 57nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 5.2V | ||
Maximum Operating Temperature 175°C | ||
Width 21.5 mm | ||
Length 16.3mm | ||
Height 5.3mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon AIMW120R045M1XKSA1 is specifically designed to meet the high requirements demanded by the automotive industry with regards to reliability, quality and performance. The increase of switching frequency for a converter using CoolSiC™ MOSFETs can result in dramatically reduced volume and weight of the magnetic components by up to 25%, which yields to significant cost increase of the application itself. The gain in performance fulfills new regulation standards in terms of higher efficiency requirements for electric vehicles.
Revolutionary semiconductor material - Silicon Carbide Very low switching losses
Threshold-free on state characteristic IGBT-compatible driving voltage (15V for turn-on)
0V turn-off gate voltage
Benchmark gate threshold voltage, VGS(th)=4.5V
Fully controllable dv/dt
Commutation robust body diode, ready for synchronous rectification Temperature independent turn-off switching losses
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