Infineon CoolSiC Type N-Channel MOSFET, 52 A, 1200 V Enhancement, 3-Pin TO-247 AIMW120R035M1HXKSA1
- RS庫存編號:
- 233-3487
- 製造零件編號:
- AIMW120R035M1HXKSA1
- 製造商:
- Infineon
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TWD1,074.00
(不含稅)
TWD1,127.70
(含稅)
訂單超過 $1,300.00 免費送貨
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- 加上 190 件從 2026年1月19日 起發貨
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* 參考價格
- RS庫存編號:
- 233-3487
- 製造零件編號:
- AIMW120R035M1HXKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | CoolSiC | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 228W | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Forward Voltage Vf | 5.2V | |
| Maximum Operating Temperature | 175°C | |
| Width | 21.5 mm | |
| Standards/Approvals | No | |
| Length | 16.3mm | |
| Height | 5.3mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series CoolSiC | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 228W | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Forward Voltage Vf 5.2V | ||
Maximum Operating Temperature 175°C | ||
Width 21.5 mm | ||
Standards/Approvals No | ||
Length 16.3mm | ||
Height 5.3mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon CoolSiC MOSFETs for automotive family has been developed for current and future on board Charger and DC-DC applications in hybrid and electric vehicles. It has 52 A drain current.
Efficiency improvement
Enabling higher frequency
Increased power density
Cooling effort reduction
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