Infineon CoolSiC N channel-Channel Power MOSFET, 52 A, 25 V Enhancement, 4-Pin TO-247-4 IMZC140R038M2HXKSA1
- RS庫存編號:
- 762-927
- 製造零件編號:
- IMZC140R038M2HXKSA1
- 製造商:
- Infineon
N
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TWD414.75
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- RS庫存編號:
- 762-927
- 製造零件編號:
- IMZC140R038M2HXKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | CoolSiC | |
| Package Type | TO-247-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 38mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 242W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.1mm | |
| Length | 23.5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series CoolSiC | ||
Package Type TO-247-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 38mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 242W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Maximum Operating Temperature 175°C | ||
Height 5.1mm | ||
Length 23.5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon CoolSiC 1400 V SiC MOSFET G2 is a Silicon Carbide MOSFET with .XT interconnection technology. It uses .XT interconnection technology for best-in-class thermal performance and robust body diode for hard commutation.
High-temperature operation
Suitable for hard commutation
Reliable thermal management
Enhanced performance
Increased efficiency
Optimized gate drive
Suitable for power electronics
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