Infineon CoolSiC Type N-Channel MOSFET, 36 A, 1200 V Enhancement, 3-Pin TO-247
- RS庫存編號:
- 233-3488
- 製造零件編號:
- AIMW120R060M1HXKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 240 件）*
TWD156,048.00
(不含稅)
TWD163,850.40
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年10月19日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 240 - 240 | TWD650.20 | TWD156,048.00 |
| 480 + | TWD630.70 | TWD151,368.00 |
* 參考價格
- RS庫存編號:
- 233-3488
- 製造零件編號:
- AIMW120R060M1HXKSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Power Dissipation Pd | 150W | |
| Forward Voltage Vf | 5.2V | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.3mm | |
| Standards/Approvals | No | |
| Width | 21.5 mm | |
| Length | 16.3mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Power Dissipation Pd 150W | ||
Forward Voltage Vf 5.2V | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Operating Temperature 175°C | ||
Height 5.3mm | ||
Standards/Approvals No | ||
Width 21.5 mm | ||
Length 16.3mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon CoolSiC MOSFETs for Automotive family has been developed for current and future on board charger and DC-DC applications in hybrid and electric vehicles. It has 36 A drain current.
Efficiency improvement
Enabling higher frequency
Increased power density
Cooling effort reduction
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