Infineon ISS Type P-Channel MOSFET, 3 A, 60 V Enhancement, 3-Pin SOT-23 ISS17EP06LMXTSA1

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TWD64.00

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TWD67.20

(含稅)

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10 - 10TWD6.40TWD64.00
20 - 90TWD6.20TWD62.00
100 - 240TWD6.00TWD60.00
250 - 490TWD5.80TWD58.00
500 +TWD5.50TWD55.00

* 參考價格

包裝方式:
RS庫存編號:
244-2275
製造零件編號:
ISS17EP06LMXTSA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Series

ISS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

80nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon P-Channel Power MOSFET offer design flexibility and ease of handling to meet the highest performance requirements which include the -12V range of products that are ideally suited for battery protection, reverse polarity protection, linear battery chargers, load switched, DC-DC converters, and low voltage drive applications.

P-Channel

Low On-resistance RDS(on)

100% Avalanche tested

Logic level or normal level

Enhancement mode

Pb-free lead plating; RoHS compliant

Halogen-free according to IEC61249-2-21

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