Nexperia Type N-Channel MOSFET, 10.3 A, 30 V, 4-Pin LFPAK88

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  • 2026年9月28日 發貨
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RS庫存編號:
243-4876
製造零件編號:
PSMNR55-40SSHJ
製造商:
Nexperia
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品牌

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10.3A

Maximum Drain Source Voltage Vds

30V

Package Type

LFPAK88

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

13.6mΩ

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

The Nexperia N-channel enhancement mode MOSFET in LFPAK88 package having 500 Amp continuous current, standard level gate drive. Next Power S3 family using Nexperia’s unique “Schottky Plus” technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. Next Power S3 is particularly suited to high efficiency applications at high switching frequencies, and also safe and reliable switching at high load-current.

Copper-clip and solder die attach for low package inductance and resistance, and high ID (max) rating

Ideal replacement for D2PAK and 10 x 12 mm leadless package types

Qualified to 175 °C

Meets UL2595 requirements for creepage and clearance

Avalanche rated, 100 % tested

Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies

Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs

Brushless DC motor control

Synchronous rectifier in high-power AC-to-DC applications, e.g. server power supplies

Battery protection and Battery Management Systems (BMS)

eFuse and load switch

Hotswap / in-rush current management

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