Nexperia Type N-Channel MOSFET, 0.41 A, 50 V Enhancement, 4-Pin LFPAK88
- RS庫存編號:
- 251-7922
- 製造零件編號:
- PSMNR90-50SLHAX
- 製造商:
- Nexperia
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小計(1 卷,共 2000 件)*
TWD270,000.00
(不含稅)
TWD283,500.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年3月22日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2000 + | TWD135.00 | TWD270,000.00 |
* 參考價格
- RS庫存編號:
- 251-7922
- 製造零件編號:
- PSMNR90-50SLHAX
- 製造商:
- Nexperia
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 0.41A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | LFPAK88 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Typical Gate Charge Qg @ Vgs | 112nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 8.1mm | |
| Width | 1.7 mm | |
| Standards/Approvals | No | |
| Height | 8.1mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 0.41A | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type LFPAK88 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 375W | ||
Typical Gate Charge Qg @ Vgs 112nC | ||
Maximum Operating Temperature 175°C | ||
Length 8.1mm | ||
Width 1.7 mm | ||
Standards/Approvals No | ||
Height 8.1mm | ||
Automotive Standard AEC-Q101 | ||
The Nexperia 410 Amp continuous current, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK88 package. Part of the ASFETs for Battery Isolation and DC Motor control family and using Nexperias unique SchottkyPlus technology delivers high efficiency and low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current.
Copper-clip and solder die attach for low package inductance and resistance, and high ID(max) rating
Qualified to 175 °C
Avalanche rated, 100 % tested
Low QG, QGD and QOSS for high efficiency, especially at higher switching frequencies
Superfast switching with soft body-diode recovery for low-spiking and ringing, recommended for low EMI designs
Narrow VGS(th) rating for easy paralleling and improved current sharing
Very strong linear-mode / safe operating area characteristics for safe and reliable switching at high-current conditions
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