Infineon BSG0810NDI 2 Type N-Channel MOSFET, 50 A, 25 V, 8-Pin TISON-8 BSG0810NDIATMA1
- RS庫存編號:
- 242-0301
- 製造零件編號:
- BSG0810NDIATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD148.00
(不含稅)
TWD155.40
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年8月07日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD74.00 | TWD148.00 |
| 10 - 98 | TWD73.00 | TWD146.00 |
| 100 - 248 | TWD71.50 | TWD143.00 |
| 250 - 498 | TWD70.00 | TWD140.00 |
| 500 + | TWD69.00 | TWD138.00 |
* 參考價格
- RS庫存編號:
- 242-0301
- 製造零件編號:
- BSG0810NDIATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | BSG0810NDI | |
| Package Type | TISON-8 | |
| Pin Count | 8 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±16 V | |
| Maximum Power Dissipation Pd | 6.25W | |
| Typical Gate Charge Qg @ Vgs | 8.4nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, JEDEC1 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series BSG0810NDI | ||
Package Type TISON-8 | ||
Pin Count 8 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±16 V | ||
Maximum Power Dissipation Pd 6.25W | ||
Typical Gate Charge Qg @ Vgs 8.4nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, IEC61249-2-21, JEDEC1 | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Infineon Power Block is a dual asymmetric N-channel OptiMOS 5 MOSFET. It is monolithic integrated Schottky like diode.
Halogen-free according to IEC61249-2-21
Pb-free lead plating and RoHS compliant
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