Infineon Dual OptiMOS 2 Type N-Channel MOSFET, 40 A, 25 V Enhancement, 8-Pin TISON-8
- RS庫存編號:
- 214-8976
- 製造零件編號:
- BSC0910NDIATMA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 卷,共 5000 件)*
TWD149,500.00
(不含稅)
TWD157,000.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月20日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 - 20000 | TWD29.90 | TWD149,500.00 |
| 25000 + | TWD29.30 | TWD146,500.00 |
* 參考價格
- RS庫存編號:
- 214-8976
- 製造零件編號:
- BSC0910NDIATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | OptiMOS | |
| Package Type | TISON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Forward Voltage Vf | 0.87V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | RoHS, IEC61249-2-21, JEDEC1 | |
| Length | 5mm | |
| Width | 6 mm | |
| Height | 1.1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series OptiMOS | ||
Package Type TISON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Forward Voltage Vf 0.87V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals RoHS, IEC61249-2-21, JEDEC1 | ||
Length 5mm | ||
Width 6 mm | ||
Height 1.1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. The Dual N-channel OptiMOS MOSFETs, comes Halogen-free according to IEC61249-2-21 and Pb-free lead plating; RoHS compliant.
Monolithic integrated Schottky-like diode
Optimized for high performance buck converters
100% avalanche tested
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