製造零件編號

Infineon Dual OptiMOS 2 Type N-Channel MOSFET, 5 A, 55 V Enhancement, 8-Pin DSO BSO604NS2XUMA1

RS庫存編號:: 222-4625
製造零件編號:: BSO604NS2XUMA1
製造商:: Infineon

Infineon Dual OptiMOS 2 Type N-Channel MOSFET, 5 A, 55 V Enhancement, 8-Pin DSO BSO604NS2XUMA1

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 10 件）*

TWD433.00

(不含稅)

TWD454.60

訂單超過 $1,300.00 免費送貨

暫時缺貨

4,990 件從 2027年1月07日起裝運發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每包*
10 - 10	TWD43.30	TWD433.00
20 - 90	TWD42.20	TWD422.00
100 - 240	TWD41.20	TWD412.00
250 - 490	TWD40.10	TWD401.00
500 +	TWD39.10	TWD391.00

* 參考價格

RS庫存編號:: 222-4625
製造零件編號:: BSO604NS2XUMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5A
	Maximum Drain Source Voltage Vds	55V
	Series	OptiMOS
	Package Type	DSO
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	35mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	2W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	19.7nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Dual
	Height	1.47mm
	Width	3.94 mm
	Length	4.9mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 5A
	Maximum Drain Source Voltage Vds 55V
	Series OptiMOS
	Package Type DSO
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 35mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 2W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 19.7nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Transistor Configuration Dual
	Height 1.47mm
	Width 3.94 mm
	Length 4.9mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard AEC-Q101

Datasheet - BSO604NS2XUMA1

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Logic level

Enhancement Mode Green Product (RoHS compliant)

AEC Qualified

Infineon Dual OptiMOS 2 Type N-Channel MOSFET, 5 A, 55 V Enhancement, 8-Pin DSO BSO604NS2XUMA1

訂單超過 $1,300.00 免費送貨

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