Infineon BSG0810NDI 2 Type N-Channel MOSFET, 50 A, 25 V, 8-Pin TISON-8
- RS庫存編號:
- 242-0300
- 製造零件編號:
- BSG0810NDIATMA1
- 製造商:
- Infineon
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 卷,共 5000 件)*
TWD184,500.00
(不含稅)
TWD193,700.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年8月10日 發貨
**需要更多嗎?**輸入您需要的數量,然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 - 5000 | TWD36.90 | TWD184,500.00 |
| 10000 + | TWD35.90 | TWD179,500.00 |
* 參考價格
- RS庫存編號:
- 242-0300
- 製造零件編號:
- BSG0810NDIATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | TISON-8 | |
| Series | BSG0810NDI | |
| Pin Count | 8 | |
| Maximum Power Dissipation Pd | 6.25W | |
| Typical Gate Charge Qg @ Vgs | 8.4nC | |
| Maximum Gate Source Voltage Vgs | ±16 V | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, IEC61249-2-21, JEDEC1 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type TISON-8 | ||
Series BSG0810NDI | ||
Pin Count 8 | ||
Maximum Power Dissipation Pd 6.25W | ||
Typical Gate Charge Qg @ Vgs 8.4nC | ||
Maximum Gate Source Voltage Vgs ±16 V | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, IEC61249-2-21, JEDEC1 | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Infineon Power Block is a dual asymmetric N-channel OptiMOS 5 MOSFET. It is monolithic integrated Schottky like diode.
Halogen-free according to IEC61249-2-21
Pb-free lead plating and RoHS compliant
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