Infineon BSC0 N-Channel MOSFET, 381 A, 40 V, 8-Pin SuperSO8 5 x 6 BSC010N04LS6ATMA1

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2 - 8TWD99.00TWD198.00
10 - 98TWD97.00TWD194.00
100 - 248TWD94.00TWD188.00
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包裝方式:
RS庫存編號:
242-0290
製造零件編號:
BSC010N04LS6ATMA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

381A

Maximum Drain Source Voltage Vds

40V

Series

BSC0

Package Type

SuperSO8 5 x 6

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.7mΩ

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

80nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

Infineon BSC0 Series MOSFET, 40V Maximum Drain Source Voltage, 381A Maximum Continuous Drain Current - BSC010N04LS6ATMA1


This MOSFET is a power-switching transistor designed for high-current, high-temperature operation in surface-mount assemblies. It provides N-channel switching capability for demanding power circuits and is intended for applications requiring substantial continuous drain current and elevated operating temperatures.

Features and Benefits:


• 381 A continuous drain current delivers sustained high-load performance
• 40 V drain-source rating enables medium-voltage power switching
• 0.7 mΩ Rds(on) minimises conduction losses under heavy current
• 81 W power dissipation supports elevated power throughput
• 80 nC typical gate charge reduces switching stress on drivers
• −55 °C to 175 °C rating permits operation across wide temperatures

Applications


• Suitable for high-current DC-DC converters in power systems
• Ideal for motor-drive stages requiring heavy current capacity
• Used with power-distribution modules in industrial equipment
• Can be used for synchronous rectification in supply designs
• Used for load-switching in harsh-temperature environments

What package and mounting style does this device use?


It is supplied in a SuperSO8 5x6 package configured for surface mount.

What is the maximum voltage that can be applied between drain and source?


The device tolerates up to 40 V between drain and source under specified conditions.

What gate voltage limits must be observed when driving this device?


Gate-to-source voltage must not exceed 20 V to avoid damaging the gate.

How does the thermal range affect deployment in extreme environments?


The device can operate from −55 °C up to 175 °C, enabling use in elevated-temperature applications where silicon junction limits are critical.

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