Infineon BSC0 N-Channel MOSFET, 381 A, 40 V, 8-Pin SuperSO8 5 x 6 BSC010N04LS6ATMA1
- RS庫存編號:
- 242-0289
- 製造零件編號:
- BSC010N04LS6ATMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 5000 件）*
TWD159,500.00
(不含稅)
TWD167,500.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年3月18日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 - 5000 | TWD31.90 | TWD159,500.00 |
| 10000 + | TWD31.00 | TWD155,000.00 |
* 參考價格
- RS庫存編號:
- 242-0289
- 製造零件編號:
- BSC010N04LS6ATMA1
- 製造商:
- Infineon
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 381A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BSC0 | |
| Package Type | SuperSO8 5 x 6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 381A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BSC0 | ||
Package Type SuperSO8 5 x 6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon BSC0 Series MOSFET, 40V Maximum Drain Source Voltage, 381A Maximum Continuous Drain Current - BSC010N04LS6ATMA1
This MOSFET is a power-switching transistor designed for high-current, high-temperature operation in surface-mount assemblies. It provides N-channel switching capability for demanding power circuits and is intended for applications requiring substantial continuous drain current and elevated operating temperatures.
Features and Benefits:
• 381 A continuous drain current delivers sustained high-load performance
• 40 V drain-source rating enables medium-voltage power switching
• 0.7 mΩ Rds(on) minimises conduction losses under heavy current
• 81 W power dissipation supports elevated power throughput
• 80 nC typical gate charge reduces switching stress on drivers
• −55 °C to 175 °C rating permits operation across wide temperatures
• 40 V drain-source rating enables medium-voltage power switching
• 0.7 mΩ Rds(on) minimises conduction losses under heavy current
• 81 W power dissipation supports elevated power throughput
• 80 nC typical gate charge reduces switching stress on drivers
• −55 °C to 175 °C rating permits operation across wide temperatures
Applications
• Suitable for high-current DC-DC converters in power systems
• Ideal for motor-drive stages requiring heavy current capacity
• Used with power-distribution modules in industrial equipment
• Can be used for synchronous rectification in supply designs
• Used for load-switching in harsh-temperature environments
• Ideal for motor-drive stages requiring heavy current capacity
• Used with power-distribution modules in industrial equipment
• Can be used for synchronous rectification in supply designs
• Used for load-switching in harsh-temperature environments
What package and mounting style does this device use?
It is supplied in a SuperSO8 5x6 package configured for surface mount.
What is the maximum voltage that can be applied between drain and source?
The device tolerates up to 40 V between drain and source under specified conditions.
What gate voltage limits must be observed when driving this device?
Gate-to-source voltage must not exceed 20 V to avoid damaging the gate.
How does the thermal range affect deployment in extreme environments?
The device can operate from −55 °C up to 175 °C, enabling use in elevated-temperature applications where silicon junction limits are critical.
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