Infineon BSC N-Channel MOSFET, 381 A, 40 V N, 8-Pin TDSON BSC110N15NS5ATMA1
- RS庫存編號:
- 241-9971
- 製造零件編號:
- BSC110N15NS5ATMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 5000 件）*
TWD268,500.00
(不含稅)
TWD281,900.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年1月20日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 - 5000 | TWD53.70 | TWD268,500.00 |
| 10000 + | TWD53.60 | TWD268,000.00 |
* 參考價格
- RS庫存編號:
- 241-9971
- 製造零件編號:
- BSC110N15NS5ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 381A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | BSC | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 381A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series BSC | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon BSC Series MOSFET, 40V Maximum Drain Source Voltage, 381A Maximum Continuous Drain Current - BSC110N15NS5ATMA1
This MOSFET is a high-current N-channel device designed for surface-mounted power switching in demanding thermal environments. It operates across a wide temperature span and is intended for applications requiring low conduction losses and substantial continuous drain capability while conforming to RoHS restrictions.
Features and Benefits:
• 0.7mΩ Rds(on) reduces conduction losses for efficient switching
• 381A continuous drain current supports heavy current loads
• 40V drain-source rating handles moderate-voltage power rails
• 81W power dissipation allows sustained thermal loading
• 80nC typical gate charge enables predictable gate-drive design
• 20V maximum gate-source tolerance supports robust drive margins
• 381A continuous drain current supports heavy current loads
• 40V drain-source rating handles moderate-voltage power rails
• 81W power dissipation allows sustained thermal loading
• 80nC typical gate charge enables predictable gate-drive design
• 20V maximum gate-source tolerance supports robust drive margins
Applications
• Suitable for high-current DC motor controllers
• Ideal for synchronous buck power stages
• Used for server power distribution modules
• Can be used for battery management and power conversion
• Suitable for industrial drive electronics operating over wide temperatures
• Ideal for synchronous buck power stages
• Used for server power distribution modules
• Can be used for battery management and power conversion
• Suitable for industrial drive electronics operating over wide temperatures
What package and mounting method does it use?
It is supplied in an 8-pin TDSON package for surface-mount assembly.
What thermal range can it withstand in operation?
It functions from −55°C up to +150°C for extended industrial temperature use.
Is it suitable for automotive qualification?
It is not specified to meet automotive standard certification.
What gate-drive considerations are necessary for fast switching?
Account for the typical 80nC gate charge when sizing driver current and slew-rate control to manage switching losses and EMI.
What environmental compliance is declared?
It is RoHS compliant, indicating restriction of certain hazardous substances.
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