Infineon BSC N-Channel MOSFET, 381 A, 40 V N, 8-Pin TDSON BSC034N10LS5ATMA1
- RS庫存編號:
- 241-9969
- 製造零件編號:
- BSC034N10LS5ATMA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 5000 件）*
TWD287,000.00
(不含稅)
TWD301,350.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年10月14日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 - 5000 | TWD57.40 | TWD287,000.00 |
| 10000 + | TWD55.70 | TWD278,500.00 |
* 參考價格
- RS庫存編號:
- 241-9969
- 製造零件編號:
- BSC034N10LS5ATMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 381A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON | |
| Series | BSC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 81W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 381A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON | ||
Series BSC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 81W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
Infineon BSC Series MOSFET, 40V Maximum Drain Source Voltage, 381A Maximum Continuous Drain Current - BSC034N10LS5ATMA1
This MOSFET is a high-current N-channel device designed for power switching and conversion in surface-mount applications. It operates across an extended temperature range and is suitable for environments requiring robust thermal tolerance and low conduction losses. The component is presented in a TDSON package for board-mounted power stages and complies with RoHS.
Features and Benefits:
• 40V rating for intermediate-voltage power stages
• 381A continuous drain current for high-current delivery
• 0.7mΩ Rds(on) to reduce conduction losses
• 81W power dissipation for sustained thermal performance
• 80nC typical gate charge for predictable switching control
• Gate-source withstand up to 20V for flexible drive margins
• 381A continuous drain current for high-current delivery
• 0.7mΩ Rds(on) to reduce conduction losses
• 81W power dissipation for sustained thermal performance
• 80nC typical gate charge for predictable switching control
• Gate-source withstand up to 20V for flexible drive margins
Applications
• Suitable for high-current DC-DC converters in power supplies
• Ideal for synchronous rectification in switching regulators
• Used with motor drivers requiring low conduction loss
• Can be used for server power distribution modules
• Appropriate for industrial power management assemblies
• Ideal for synchronous rectification in switching regulators
• Used with motor drivers requiring low conduction loss
• Can be used for server power distribution modules
• Appropriate for industrial power management assemblies
What ambient temperatures can it withstand in operation?
It operates from -55°C up to +150°C, allowing use in wide-temperature environments.
How does the device help reduce heat in dense power systems?
The low drain-source resistance minimises I2R losses, lowering heat generation during conduction.
What mounting method is required for board assembly?
It is intended for surface mounting in a TDSON package to facilitate Compact power layouts.
How much forward voltage drop is typical under conduction?
The forward voltage is specified at 1.1V for conditions where Vgs and Id produce forward conduction.
相關連結
- Infineon BSC N-Channel MOSFET 40 V N, 8-Pin TDSON BSC034N10LS5ATMA1
- Infineon BSC N-Channel MOSFET 40 V N, 8-Pin TDSON BSC096N10LS5ATMA1
- Infineon BSC N-Channel MOSFET 40 V N, 8-Pin TDSON BSC034N06NSATMA1
- Infineon BSC N-Channel MOSFET 40 V N, 8-Pin TDSON BSC070N10LS5ATMA1
- Infineon BSC N-Channel MOSFET 40 V N, 8-Pin TDSON BSC110N15NS5ATMA1
- Infineon BSC N-Channel MOSFET 120 V N, 8-Pin TDSON
- Infineon BSC N-Channel MOSFET 60 V N, 8-Pin TDSON BSC112N06LDATMA1
- Infineon BSC N-Channel MOSFET 75 V N, 8-Pin TDSON BSC036NE7NS3GATMA1