Vishay Type N-Channel MOSFET, 63.7 A, 60 V Depletion, 8-Pin PowerPAK SO-8 SiR516DP-T1-RE3
- RS庫存編號:
- 239-8651
- 製造零件編號:
- SiR516DP-T1-RE3
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
TWD428.00
(不含稅)
TWD449.40
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 5,750 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD85.60 | TWD428.00 |
| 50 - 95 | TWD84.20 | TWD421.00 |
| 100 - 245 | TWD82.20 | TWD411.00 |
| 250 - 995 | TWD80.00 | TWD400.00 |
| 1000 + | TWD79.20 | TWD396.00 |
* 參考價格
- RS庫存編號:
- 239-8651
- 製造零件編號:
- SiR516DP-T1-RE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 63.7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.01Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 63.7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.01Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 100 V. This MOSFET used for power supply, motor drive control and synchronous rectification.
Very low resistance
UIS tested
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