Vishay Type N-Channel MOSFET, 93.6 A, 60 V Depletion, 8-Pin PowerPAK SO-8 SIR188LDP-T1-RE3
- RS庫存編號:
- 239-8644
- 製造零件編號:
- SIR188LDP-T1-RE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD256.00
(不含稅)
TWD268.80
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD51.20 | TWD256.00 |
| 50 - 95 | TWD50.80 | TWD254.00 |
| 100 - 245 | TWD49.60 | TWD248.00 |
| 250 - 995 | TWD48.80 | TWD244.00 |
| 1000 + | TWD48.00 | TWD240.00 |
* 參考價格
- RS庫存編號:
- 239-8644
- 製造零件編號:
- SIR188LDP-T1-RE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 93.6A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.75mΩ | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 93.6A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.75mΩ | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 60 V. This MOSFET used for primary side switch, motor drive switch and synchronous rectification.
Very low resistance
UIS tested
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