Vishay EF Type N-Channel Power MOSFET, 6.5 A, 850 V Depletion, 3-Pin TO-220 SiHA17N80AEF-GE3

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包裝方式:
RS庫存編號:
239-8622
製造零件編號:
SiHA17N80AEF-GE3
製造商:
Vishay
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品牌

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6.5A

Maximum Drain Source Voltage Vds

850V

Package Type

TO-220

Series

EF

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.305Ω

Channel Mode

Depletion

Typical Gate Charge Qg @ Vgs

63nC

Maximum Gate Source Voltage Vgs

30V

Maximum Power Dissipation Pd

34W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Vishay Series EF Power MOSFET, 850V Maximum Drain Source Voltage, 6.5A Maximum Continuous Drain Current - SiHA17N80AEF-GE3


This power MOSFET is a high-voltage N-channel transistor designed for switching and power-management roles in demanding electronic systems. It is supplied in a TO-220 package intended for surface mounting and supports extended operating temperatures, making it suitable for applications requiring wide thermal-range performance and automotive-grade robustness.

Features and Benefits:


• 850V drain-source rating enables high-voltage switching applications
• 6.5A continuous drain current supports moderate load currents
• 0.305Ω Rds(on) reduces conduction losses under load
• 63nC typical gate charge lowers switching energy demands
• 34W maximum power dissipation manages thermal stress in operation
• -55°C to +150°C operating range withstands extreme temperatures

Applications


• Suitable for high-voltage power converters and inverters
• Ideal for automotive electronics meeting AEC‑Q101 requirements
• Used with industrial motor drives requiring robust switching
• Can be used for SMPS stages handling high-voltage rails
• Used for power switching in renewable-energy interfaces

What gate voltage limits must be observed for safe operation?


The device must not exceed a gate-source voltage of 30V to prevent gate-oxide stress.

How does the package influence thermal handling?


The TO-220 package allows effective heat-sinking and supports the stated 34W power dissipation when mounted appropriately.

What channel characteristics affect circuit topology choices?


Being an N-channel depletion-mode device, it conducts without gate drive and requires gate-biasing strategies to control off-state behaviour.

Is the device suitable for regulated automotive environments?


It conforms to AEC‑Q101 automotive standards and is specified for extended temperature limits to meet vehicle-system requirements.

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