Vishay EF Type N-Channel Power MOSFET, 6 A, 850 V Depletion, 3-Pin TO-220 SIHA15N80AEF-GE3

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包裝方式:
RS庫存編號:
239-8620
製造零件編號:
SIHA15N80AEF-GE3
製造商:
Vishay
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品牌

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

850V

Series

EF

Package Type

TO-220

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.35Ω

Channel Mode

Depletion

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

54nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30V

Maximum Power Dissipation Pd

33W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Vishay Series EF Power MOSFET, 850V Drain Source Voltage, 6A Continuous Drain Current - SIHA15N80AEF-GE3


This power MOSFET is a high-voltage, N-channel semiconductor device designed for switching and power-management duties in demanding environments. It is supplied in a TO-220 package for surface mounting and is intended for applications that require robust high-voltage capability, controlled gate behaviour and operation across a wide temperature span.

Features and Benefits:


• 850V drain voltage enables high-voltage switching applications
• 6A continuous drain current supports medium-power loads
• 0.35Ω Rds(on) minimises conduction losses under load
• 33W power dissipation allows sustained thermal handling
• 54nC typical gate charge permits predictable gate-drive design
• ±30V gate rating protects against excessive gate stress

Applications


• Suitable for industrial high-voltage power converters
• Ideal for automotive electronics meeting AEC‑Q101 needs
• Used with switch-mode power supplies and inverters
• Can be used for motor drive front-end switching
• Suitable for auxiliary power supplies in harsh environments

What temperature range can it operate within reliably?


It is specified to function from -55°C up to +150°C for wide ambient and junction tolerance.

How is gate-drive design influenced by the device?


The typical gate charge of 54nC defines the gate energy requirement and informs driver current and switching-speed trade-offs.

What packaging and mounting considerations apply?


The TO-220 package is provided for surface mounting and offers convenient thermal connection options for heatsinking.

What polarity and channel behaviour should designers expect?


The device is an N-channel depletion-mode transistor, requiring appropriate biasing and control strategies in circuit designs.

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