STMicroelectronics STD Type N-Channel MOSFET, 55 A, 650 V Enhancement, 3-Pin TO-252 STD86N3LH5
- RS庫存編號:
- 239-6330
- 製造零件編號:
- STD86N3LH5
- 製造商:
- STMicroelectronics
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TWD233.00
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TWD244.65
(含稅)
訂單超過 $1,300.00 免費送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD46.60 | TWD233.00 |
| 10 - 95 | TWD46.00 | TWD230.00 |
| 100 - 245 | TWD44.80 | TWD224.00 |
| 250 - 495 | TWD44.00 | TWD220.00 |
| 500 + | TWD43.00 | TWD215.00 |
* 參考價格
- RS庫存編號:
- 239-6330
- 製造零件編號:
- STD86N3LH5
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Series | STD | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 70W | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | UL | |
| Length | 6.6mm | |
| Height | 2.4mm | |
| Width | 6.2 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Series STD | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 70W | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals UL | ||
Length 6.6mm | ||
Height 2.4mm | ||
Width 6.2 mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics MOSFET device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET H5 technology. This device has been optimized to achieve very low on-state resistance.
Low on-resistance RDSon
High avalanche ruggedness
Low gate drive power losses
30 V Vdss
80 A Id
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