STMicroelectronics STD Type N-Channel MOSFET, 80 A, 35 V Enhancement, 3-Pin TO-252
- RS庫存編號:
- 249-6744
- 製造零件編號:
- STD80N240K6
- 製造商:
- STMicroelectronics
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 2500 件）*
TWD305,750.00
(不含稅)
TWD321,050.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年1月18日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 2500 | TWD122.30 | TWD305,750.00 |
| 5000 + | TWD118.60 | TWD296,500.00 |
* 參考價格
- RS庫存編號:
- 249-6744
- 製造零件編號:
- STD80N240K6
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 35V | |
| Package Type | TO-252 | |
| Series | STD | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.01mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 70W | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.6 mm | |
| Length | 10.1mm | |
| Standards/Approvals | UL | |
| Height | 2.4mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 35V | ||
Package Type TO-252 | ||
Series STD | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.01mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 70W | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Maximum Operating Temperature 175°C | ||
Width 6.6 mm | ||
Length 10.1mm | ||
Standards/Approvals UL | ||
Height 2.4mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics is very high voltage N-channel Power MOSFET is designed using the ultimate mesh K6 technology based on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
Worldwide best RDS(on) x area
Worldwide best FOM (figure of merit)
Ultra low gate charge
100% avalanche tested
Zener-protected
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