STMicroelectronics N-Channel MOSFET, 10 A, 650 V Enhancement, 3-Pin TO-252 STD11N60DM2

此圖片僅供參考,請參閲產品詳細資訊及規格

暫時無法供應
我們無法確定此產品何時有貨,RS 預計將其從我們的產品目錄中移除。
RS庫存編號:
188-8285
製造零件編號:
STD11N60DM2
製造商:
STMicroelectronics
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

STMicroelectronics

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

420mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

16.5nC

Maximum Gate Source Voltage Vgs

25V

Forward Voltage Vf

1.6V

Maximum Power Dissipation Pd

110W

Maximum Operating Temperature

150°C

Height

2.17mm

Length

6.6mm

Width

6.2mm

Standards/Approvals

No

Automotive Standard

No

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode

Extremely low gate charge and input capacitance

Low on-resistance

Extremely high dv/dt ruggedness

Zener-protected

Applications

Switching applications

相關連結

第一時間了解我們的最新產品和優惠

電郵

您在訂閱此郵件時提供的個人信息將根據《隱私政策》進行處理。