Vishay SIH Type N-Channel MOSFET, 20 A, 800 V, 3-Pin TO-220AB SIHP24N80AEF-GE3
- RS庫存編號:
- 239-5382
- 製造零件編號:
- SIHP24N80AEF-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD3,595.00
(不含稅)
TWD3,775.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 850 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD71.90 | TWD3,595.00 |
| 100 - 450 | TWD70.40 | TWD3,520.00 |
| 500 - 950 | TWD69.00 | TWD3,450.00 |
| 1000 + | TWD67.00 | TWD3,350.00 |
* 參考價格
- RS庫存編號:
- 239-5382
- 製造零件編號:
- SIHP24N80AEF-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | SIH | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.19Ω | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 208W | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series SIH | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.19Ω | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 208W | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay EF series power MOSFET has drain current of 20 A. It is used for server and telecom power supplies, switch mode power supplies (SMPS), power factor correction power supplies (PFC)
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated
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