Vishay EF Type N-Channel Power MOSFET, 20 A, 800 V, 3-Pin TO-220AB SIHP24N80AEF-GE3

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TWD6,337.00

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  • 2027年2月15日 發貨
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RS庫存編號:
239-5382
製造零件編號:
SIHP24N80AEF-GE3
製造商:
Vishay
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品牌

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-220AB

Series

EF

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.195Ω

Maximum Gate Source Voltage Vgs

30V

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

90nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

208W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

Vishay Series EF Power MOSFET, 800V Drain Source Voltage, 20A Continuous Drain Current - SIHP24N80AEF-GE3


This power MOSFET is a high-voltage N-channel switching device designed for through-hole power electronics. It is intended for use in environments requiring robust switching at elevated voltages and currents, delivering controlled conduction and fast switching behaviour for industrial and converter applications while operating across a very wide temperature range.

Features and Benefits:


• 800V drain-source rating enables high-voltage switching
• 20A continuous drain current supports heavy load handling
• 0.195Ω low Rds(on) reduces conduction losses
• 208W power dissipation allows high-power operation
• 90nC typical gate charge yields predictable switching dynamics
• 30V gate-source maximum protects gate integrity

Applications


• Suitable for high-voltage DC-DC converter stages
• Ideal for power supply primary switch functions
• Used with motor drive front-end circuits
• Can be used for industrial inverter switching
• Suitable for laboratory high-voltage test rigs

What package and mounting method does it use?


It is supplied in a TO-220AB package and is intended for through-hole mounting to allow straightforward heatsinking and chassis attachment.

What thermal range can it withstand in demanding environments?


The device is specified to operate from -55°C up to 150°C, accommodating wide ambient and elevated junction temperatures.

How does the forward voltage affect switching performance?


The typical forward voltage of 1.2V indicates conduction-threshold behaviour during body-diode conduction and influences loss calculations during reverse-recovery and freewheeling events.

Is this device suitable for automotive-standard designs?


It is not designated to meet automotive standards and should not be assumed compliant with automotive-specific requirements.

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