Vishay SIH Type N-Channel MOSFET, 20 A, 800 V, 3-Pin TO-220AB SIHP24N80AEF-GE3
- RS庫存編號:
- 239-5382
- 製造零件編號:
- SIHP24N80AEF-GE3
- 製造商:
- Vishay
可享批量折扣
小計（1 管，共 50 件）*
TWD3,595.00
(不含稅)
TWD3,775.00
(含稅)
添加 50 件 件可免費送貨
有庫存
- 加上 850 件從 2026年2月23日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD71.90 | TWD3,595.00 |
| 100 - 450 | TWD70.40 | TWD3,520.00 |
| 500 - 950 | TWD69.00 | TWD3,450.00 |
| 1000 + | TWD67.00 | TWD3,350.00 |
* 參考價格
- RS庫存編號:
- 239-5382
- 製造零件編號:
- SIHP24N80AEF-GE3
- 製造商:
- Vishay
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | SIH | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.19Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series SIH | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.19Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay EF series power MOSFET has drain current of 20 A. It is used for server and telecom power supplies, switch mode power supplies (SMPS), power factor correction power supplies (PFC)
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated
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