製造零件編號

Vishay SIH Type N-Channel MOSFET, 20 A, 850 V TO-247AC SIHG24N80AEF-GE3

RS庫存編號:: 239-5377
製造零件編號:: SIHG24N80AEF-GE3
製造商:: Vishay

Vishay SIH Type N-Channel MOSFET, 20 A, 850 V TO-247AC SIHG24N80AEF-GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 2 件）*

TWD314.00

(不含稅)

TWD329.70

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 522 個，準備發貨

單位	每單位	每包*
2 - 8	TWD157.00	TWD314.00
10 - 24	TWD152.00	TWD304.00
26 - 98	TWD147.00	TWD294.00
100 - 498	TWD142.50	TWD285.00
500 +	TWD138.50	TWD277.00

* 參考價格

RS庫存編號:: 239-5377
製造零件編號:: SIHG24N80AEF-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	850V
	Series	SIH
	Package Type	TO-247AC
	Mount Type	Through Hole
	Maximum Drain Source Resistance Rds	0.17Ω
	Maximum Gate Source Voltage Vgs	±30 V
	Maximum Power Dissipation Pd	208W
	Typical Gate Charge Qg @ Vgs	60nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 850V
	Series SIH
	Package Type TO-247AC
	Mount Type Through Hole
	Maximum Drain Source Resistance Rds 0.17Ω
	Maximum Gate Source Voltage Vgs ±30 V
	Maximum Power Dissipation Pd 208W
	Typical Gate Charge Qg @ Vgs 60nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - SIHG24N80AEF-GE3

The Vishay EF series power MOSFET has drain current of 20 A. It is used for server and telecom power supplies, switch mode power supplies (SMPS), power factor correction power supplies (PFC)

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

Avalanche energy rated (UIS)

Vishay SIH Type N-Channel MOSFET, 20 A, 850 V TO-247AC SIHG24N80AEF-GE3

訂單超過 $1,300.00 免費送貨

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