Infineon OptiMOS™ Type N-Channel MOSFET, 479 A, 25 V, 8-Pin TDSON BSC004NE2LS5ATMA1
- RS庫存編號:
- 236-3641
- 製造零件編號:
- BSC004NE2LS5ATMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 包，共 5 件）*
TWD314.00
(不含稅)
TWD329.70
(含稅)
添加 25 件 件可免費送貨
有庫存
- 加上 4,990 件從 2026年2月23日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD62.80 | TWD314.00 |
| 10 - 95 | TWD61.40 | TWD307.00 |
| 100 - 245 | TWD59.40 | TWD297.00 |
| 250 - 495 | TWD58.40 | TWD292.00 |
| 500 + | TWD56.80 | TWD284.00 |
* 參考價格
- RS庫存編號:
- 236-3641
- 製造零件編號:
- BSC004NE2LS5ATMA1
- 製造商:
- Infineon
規格
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 479A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | TDSON | |
| Series | OptiMOS™ | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.45mΩ | |
| Typical Gate Charge Qg @ Vgs | 135nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 188W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 5.49mm | |
| Width | 6.35 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 479A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type TDSON | ||
Series OptiMOS™ | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.45mΩ | ||
Typical Gate Charge Qg @ Vgs 135nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 188W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 5.49mm | ||
Width 6.35 mm | ||
Automotive Standard No | ||
The Infineon OptiMOS power MOSFET offers Benchmark solutions by enabling highest power density and energy efficiency, both in stand by and full operation. It offers drain source on-state resistance of 0.45 m Ohm.
Highest efficiency
Highest power density in SuperSO8 package
Reduction of overall system costs
RoHS compliant
Halogen free
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