Infineon ISC Type N-Channel MOSFET, 230 A, 100 V, 8-Pin SuperSO8 5 x 6 ISC022N10NM6ATMA1

RS庫存編號:: 235-4862
製造零件編號:: ISC022N10NM6ATMA1
製造商:: Infineon

Infineon ISC Type N-Channel MOSFET, 230 A, 100 V, 8-Pin SuperSO8 5 x 6 ISC022N10NM6ATMA1

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可享批量折扣

小計（1 卷，共 5000 件）*

TWD486,000.00

(不含稅)

TWD510,300.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

5,000 件從 2026年9月24日起裝運發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
5000 - 20000	TWD97.20	TWD486,000.00
25000 +	TWD94.30	TWD471,500.00

* 參考價格

RS庫存編號:: 235-4862
製造零件編號:: ISC022N10NM6ATMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	230A
	Maximum Drain Source Voltage Vds	100V
	Package Type	SuperSO8 5 x 6
	Series	ISC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	2.24mΩ
	Typical Gate Charge Qg @ Vgs	91nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	245W
	Maximum Operating Temperature	175°C
	Length	6.1mm
	Height	5.1mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 230A
	Maximum Drain Source Voltage Vds 100V
	Package Type SuperSO8 5 x 6
	Series ISC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 2.24mΩ
	Typical Gate Charge Qg @ Vgs 91nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 245W
	Maximum Operating Temperature 175°C
	Length 6.1mm
	Height 5.1mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - ISC022N10NM6ATMA1

OptiMOS™ 6 power MOSFET 100 V Normal Level in SuperSO8 package

ISC022N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of discrete power MOSFETs. Compared to alternative products, Infineon’s leading thin wafer technology is enabling significant performance benefits.

Infineon’s OptiMOS™ 6 industrial power MOSFET 100 V is designed for high switching frequency application such as telecom and server power supply, but also the Ideal choice for other applications such as solar, power tools and drones.

In the SuperSO8 package it achieves ∼20% improvements in on-state resistance (RDS(on)) and 30% better figure of merits (FOM - RDS(on) x Qg and Qgd) compared to the previous technology OptiMOS™ 5. This enables designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.

Summary of Features

Compared to OptiMOS™ 5, the new technology achieves:

•∼20% lower RDS(on)

•30% improved FOMg and 40% better FOMgd

•Lower and softer reverse recovery charge (Qrr)

•Ideal for high switching frequency

•MSL 1 classified according to J-STD-020

•175 °C junction temperature rating

•High avalanche energy rating

•Pb-free lead plating

•RoHS compliant

Benefits

•Low conduction losses

•Low switching losses

•Fast turn on and off

•Less paralleling required

•Robust reliable performance

•Environmentally friendly