Infineon ISC Type N-Channel MOSFET, 230 A, 100 V, 8-Pin SuperSO8 5 x 6 ISC022N10NM6ATMA1
- RS庫存編號:
- 235-4862
- 製造零件編號:
- ISC022N10NM6ATMA1
- 製造商:
- Infineon
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可享批量折扣
查看批量定價選項小計（1 卷，共 5000 件）*
TWD486,000.00
(不含稅)
TWD510,300.00
(含稅)
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單位 | 每單位 | 每卷* |
|---|---|---|
| 5000 - 20000 | TWD97.20 | TWD486,000.00 |
| 25000 + | TWD94.30 | TWD471,500.00 |
* 參考價格
- RS庫存編號:
- 235-4862
- 製造零件編號:
- ISC022N10NM6ATMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 230A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SuperSO8 5 x 6 | |
| Series | ISC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.24mΩ | |
| Maximum Power Dissipation Pd | 245W | |
| Typical Gate Charge Qg @ Vgs | 91nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.1mm | |
| Length | 6.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 230A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SuperSO8 5 x 6 | ||
Series ISC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.24mΩ | ||
Maximum Power Dissipation Pd 245W | ||
Typical Gate Charge Qg @ Vgs 91nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 5.1mm | ||
Length 6.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
OptiMOS™ 6 power MOSFET 100 V Normal Level in SuperSO8 package
ISC022N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of discrete power MOSFETs. Compared to alternative products, Infineon’s leading thin wafer technology is enabling significant performance benefits.
Infineon’s OptiMOS™ 6 industrial power MOSFET 100 V is designed for high switching frequency application such as telecom and server power supply, but also the Ideal choice for other applications such as solar, power tools and drones.
In the SuperSO8 package it achieves ∼20% improvements in on-state resistance (RDS(on)) and 30% better figure of merits (FOM - RDS(on) x Qg and Qgd) compared to the previous technology OptiMOS™ 5. This enables designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction.
Summary of Features
Compared to OptiMOS™ 5, the new technology achieves:
•∼20% lower RDS(on)
•30% improved FOMg and 40% better FOMgd
•Lower and softer reverse recovery charge (Qrr)
•Ideal for high switching frequency
•MSL 1 classified according to J-STD-020
•175 °C junction temperature rating
•High avalanche energy rating
•Pb-free lead plating
•RoHS compliant
Benefits
•Low conduction losses
•Low switching losses
•Fast turn on and off
•Less paralleling required
•Robust reliable performance
•Environmentally friendly
•Less paralleling required
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