ROHM Type N-Channel MOSFET, 9 A, 650 V Enhancement, 3-Pin TO-252 R6509END3TL1

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小計(1 卷,共 2500 件)*

TWD75,250.00

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TWD79,000.00

(含稅)

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12500 +TWD29.20TWD73,000.00

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RS庫存編號:
235-2689
製造零件編號:
R6509END3TL1
製造商:
ROHM
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品牌

ROHM

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

585mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

94W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

24nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

6.4mm

Width

2.4 mm

Height

10.4mm

Standards/Approvals

No

Automotive Standard

No

The ROHM R6xxxENx series are low-noise products, super Junction MOSFET, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.

Low on-resistance

Fast switching speed

Parallel use is easy

Pb-free plating

RoHS compliant

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