Infineon Isolated F4 Type N-Channel MOSFET, 25 A, 1200 V, 2-Pin AG-EASY2B F445MR12W1M1B76BPSA1

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TWD77,277.60

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TWD81,141.60

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RS庫存編號:
234-8967
製造零件編號:
F445MR12W1M1B76BPSA1
製造商:
Infineon
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品牌

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

1200V

Package Type

AG-EASY2B

Series

F4

Pin Count

2

Maximum Drain Source Resistance Rds

45mΩ

Minimum Operating Temperature

-40°C

Forward Voltage Vf

5.65V

Maximum Gate Source Voltage Vgs

15 V

Typical Gate Charge Qg @ Vgs

0.062μC

Maximum Power Dissipation Pd

20mW

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Standards/Approvals

60749 and 60068, IEC 60747

Height

16.4mm

Length

62.8mm

Width

33.8 mm

Automotive Standard

No

The Infineon IGBT module has a 4 N-Channel (Half Bridge) FET Type works with 1200V Drain to Source Voltage and 75A continuous drain current.

Chassis mount

-40°C to 150°C operating temperature

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