Infineon FS75R12W2T7B11BOMA1 IGBT, 65 A 1200 V AG-EASY2B-711
- RS庫存編號:
- 258-0906
- 製造零件編號:
- FS75R12W2T7B11BOMA1
- 製造商:
- Infineon
可享批量折扣
小計（1 件）*
TWD1,643.00
(不含稅)
TWD1,725.15
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年7月12日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 |
|---|---|
| 1 - 1 | TWD1,643.00 |
| 2 - 3 | TWD1,610.00 |
| 4 - 5 | TWD1,578.00 |
| 6 - 7 | TWD1,546.00 |
| 8 + | TWD1,516.00 |
* 參考價格
- RS庫存編號:
- 258-0906
- 製造零件編號:
- FS75R12W2T7B11BOMA1
- 製造商:
- Infineon
規格
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法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Maximum Continuous Collector Current | 65 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Package Type | AG-EASY2B-711 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Maximum Continuous Collector Current 65 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Package Type AG-EASY2B-711 | ||
The Infineon EasyPACK 2B 1200 V, 75 A six-pack IGBT module with TRENCHSTOP IGBT7, emitter controlled 7 diode, NTC and PressFIT contact technology.
Al2O3 substrate with low thermal resistance
High power density
Compact design
PressFIT contact technology
High power density
Compact design
PressFIT contact technology
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
相關連結
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