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選取全部	屬性	值
	品牌	onsemi
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	46A
	Maximum Drain Source Voltage Vds	650V
	Series	SiC Power
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	84mΩ
	Channel Mode	N
	Maximum Gate Source Voltage Vgs	22 V
	Maximum Power Dissipation Pd	221W
	Forward Voltage Vf	3.9V
	Typical Gate Charge Qg @ Vgs	87nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	15.8mm
	Height	22.74mm
	Width	5.2 mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 onsemi
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 46A
	Maximum Drain Source Voltage Vds 650V
	Series SiC Power
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 84mΩ
	Channel Mode N
	Maximum Gate Source Voltage Vgs 22 V
	Maximum Power Dissipation Pd 221W
	Forward Voltage Vf 3.9V
	Typical Gate Charge Qg @ Vgs 87nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 15.8mm
	Height 22.74mm
	Width 5.2 mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - NTH4L060N090SC1

The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.

Highest efficiency

Faster operation frequency

Increased power density

Reduced EMI

Reduced system size

onsemi SiC Power Type N-Channel MOSFET, 46 A, 650 V N, 4-Pin TO-247

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