onsemi SiC Power Type N-Channel MOSFET, 46 A, 650 V N, 4-Pin TO-247 NTH4L060N090SC1
- RS庫存編號:
- 229-6463
- 製造零件編號:
- NTH4L060N090SC1
- 製造商:
- onsemi
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可享批量折扣
小計（1 件）*
TWD266.00
(不含稅)
TWD279.30
(含稅)
訂單超過 $1,300.00 免費送貨
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單位 | 每單位 |
|---|---|
| 1 - 9 | TWD266.00 |
| 10 - 49 | TWD259.00 |
| 50 - 99 | TWD251.00 |
| 100 - 224 | TWD246.00 |
| 225 + | TWD241.00 |
* 參考價格
- RS庫存編號:
- 229-6463
- 製造零件編號:
- NTH4L060N090SC1
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 46A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | SiC Power | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 84mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 3.9V | |
| Typical Gate Charge Qg @ Vgs | 87nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 221W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.2 mm | |
| Standards/Approvals | No | |
| Height | 22.74mm | |
| Length | 15.8mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 46A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series SiC Power | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 84mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 3.9V | ||
Typical Gate Charge Qg @ Vgs 87nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 221W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 5.2 mm | ||
Standards/Approvals No | ||
Height 22.74mm | ||
Length 15.8mm | ||
Automotive Standard No | ||
The ON Semiconductor SiC Power series MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.
Highest efficiency
Faster operation frequency
Increased power density
Reduced EMI
Reduced system size
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