onsemi SUPERFET III Type N-Channel MOSFET, 13 A, 650 V N, 3-Pin TO-252 NTD250N65S3H
- RS庫存編號:
- 229-6451
- 製造零件編號:
- NTD250N65S3H
- 製造商:
- onsemi
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可享批量折扣
查看批量定價選項小計（1 包，共 5 件）*
TWD441.00
(不含稅)
TWD463.05
(含稅)
訂單超過 $1,300.00 免費送貨
供應短缺
- 加上 680 件從 2026年6月08日 起發貨
我們目前的可售庫存有限，並且我們的供應商預計會出現供應短缺的狀況。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD88.20 | TWD441.00 |
| 10 - 95 | TWD85.80 | TWD429.00 |
| 100 - 245 | TWD82.80 | TWD414.00 |
| 250 - 495 | TWD81.00 | TWD405.00 |
| 500 + | TWD79.20 | TWD396.00 |
* 參考價格
- RS庫存編號:
- 229-6451
- 製造零件編號:
- NTD250N65S3H
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | SUPERFET III | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 106W | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Height | 6.22mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series SUPERFET III | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 106W | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Height 6.22mm | ||
Automotive Standard No | ||
The ON Semiconductor SUPER FET series is brand new high voltage super junction MOSFET that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Low effective output capacitance
100% avalanche tested
Higher system reliability at low temperature operation
Pb−free
RoHS compliant
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