Infineon iPB Type P-Channel MOSFET, 120 A, 40 V Enhancement, 3-Pin TO-263 IPB120P04P4L03ATMA2

RS庫存編號:: 229-1819
製造零件編號:: IPB120P04P4L03ATMA2
製造商:: Infineon

Infineon iPB Type P-Channel MOSFET, 120 A, 40 V Enhancement, 3-Pin TO-263 IPB120P04P4L03ATMA2

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TWD575.00

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TWD603.75

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單位	每單位	每包*
5 - 5	TWD115.00	TWD575.00
10 - 95	TWD112.00	TWD560.00
100 - 245	TWD109.60	TWD548.00
250 - 495	TWD107.00	TWD535.00
500 +	TWD99.00	TWD495.00

* 參考價格

RS庫存編號:: 229-1819
製造零件編號:: IPB120P04P4L03ATMA2
製造商:: Infineon

規格

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	120A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TO-263
	Series	iPB
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.1mΩ
	Channel Mode	Enhancement
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 120A
	Maximum Drain Source Voltage Vds 40V
	Package Type TO-263
	Series iPB
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.1mΩ
	Channel Mode Enhancement
	Standards/Approvals No
	Automotive Standard AEC-Q101

Datasheet - IPB120P04P4L03ATMA2

IPB120P04P4L-03, -40V, P-Ch, 3.1 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-P2

The Infineon p channel logic level MOSFET has highest current capability and 100 percent avalanche tested. It has lowest switching and conduction power losses for highest thermal efficiency.

Summary of Features

•P-channel - Logic Level - Enhancement mode

•AEC qualified

•MSL1 up to 260°C peak reflow

•175°C operating temperature

•Green package (RoHS compliant)

•100% Avalanche tested

Benefits

•No charge pump required for high side drive.

•Simple interface drive circuit

•World's lowest RDSon at 40V

•Highest current capability

•Lowest switching and conduction power losses for highest thermal efficiency

•Robust packages with superior quality and reliability

•Standard packages TO-252, TO-263, TO-220, TO-262

Potential Applications

•High-Side MOSFETs for motor bridges (half-bridges, H-bridges, 3-phase-motors)

•Bridge configuration could be realized with 40V P-Channel as high side device with no need of charge pump