Vishay E Type N-Channel Power MOSFET, 34 A, 700 V Enhancement, 3-Pin TO-247AD SQW33N65EF-GE3

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包裝方式:
RS庫存編號:
228-2975
製造零件編號:
SQW33N65EF-GE3
製造商:
Vishay
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品牌

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

700V

Package Type

TO-247AD

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

109mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

115nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30V

Maximum Power Dissipation Pd

375W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

Vishay Series E Power MOSFET, 700V Drain Source Voltage, 34A Maximum Continuous Drain Current - SQW33N65EF-GE3


This power MOSFET is a high-voltage, N-channel transistor designed for switching and power-conversion tasks in industrial and automotive contexts. It is supplied in a through-hole TO-247AD package for robust mounting and thermal handling, and it operates across a wide ambient temperature range suited to demanding environments.

Features and Benefits:


• 700V drain rating enables high-voltage switching applications • 34 A continuous drain current supports substantial load currents • 109 mΩ Rds(on) reduces conduction losses in power stages • 115 nC typical gate charge for predictable switching behaviour • 30V gate tolerance allows compatibility with common gate drivers • 375W power dissipation aids thermal margin under high load

Applications


• Suitable for motor-drive stages requiring high-voltage switching • Ideal for DC-DC converters in industrial power supplies • Used for automotive power modules meeting AEC-Q101 requirements • Can be used for high-voltage inverter and UPS circuits

What ambient temperatures can it tolerate during operation?


It can operate from -55°C up to 175°C, allowing use in harsh thermal environments.

How does package choice affect cooling and mounting?


The TO-247AD through-hole format provides a large metal tab for heatsinking and secure board attachment for high-power assemblies.

What performance should be expected during switching events?


Typical gate charge is 115 nC at the specified gate drive, which informs gate-driver sizing and switching-loss calculations.

Is this device suitable for use in safety-conscious automotive electronics?


It conforms to AEC-Q101 automotive standards and is intended for automotive-grade applications where such qualification is required.

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