Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 257 A, 30 V Enhancement, 8-Pin PowerPAIR 6 x 5F SiZF906BDT-T1-GE3
- RS庫存編號:
- 228-2941
- 製造零件編號:
- SiZF906BDT-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD263.00
(不含稅)
TWD276.15
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 5,315 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD52.60 | TWD263.00 |
| 50 - 95 | TWD51.00 | TWD255.00 |
| 100 - 245 | TWD50.00 | TWD250.00 |
| 250 - 995 | TWD48.80 | TWD244.00 |
| 1000 + | TWD47.60 | TWD238.00 |
* 參考價格
- RS庫存編號:
- 228-2941
- 製造零件編號:
- SiZF906BDT-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 257A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | PowerPAIR 6 x 5F | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0021Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 257A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type PowerPAIR 6 x 5F | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0021Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay Dual N-Channel 30 V (D-S) MOSFET.
100 % Rg and UIS tested
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